Insulated Gate Bipolar Transistor Functions

Core Functions

High-efficiency Power Conversion and Control: Acts as a switching device to achieve efficient conversion between DC and AC (such as DC/AC inversion).

 

High Input Impedance, Voltage-driven: The gate consumes almost no current (microampere level), requiring low drive power, with only 10–15V drive voltage needed.

 

Low Conduction Voltage Drop: Saturation voltage drop in the on-state is typically 1–3V, much lower than equivalent MOSFETs, significantly reducing conduction loss under high current.

 

High Switching Frequency: Supports switching frequencies of 1–20 kHz, suitable for high-frequency inverter applications (such as photovoltaic inverters and motor drives).

 

High Power Handling Capability: A single module can withstand voltages up to 6500V and currents up to 600A, suitable for high-voltage, high-power systems.