Insulated Gate Bipolar Transistor Usage Tips

The Insulated Gate Bipolar Transistor (IGBT) is a voltage-controlled switching device widely used in medium- to high-power electronic systems, combining the advantages of MOSFETs' high input impedance and simple drive with BJTs' low conduction voltage drop and high current-carrying capability.

 

Basic Usage Points
Driving Voltage Requirements
IGBTs are voltage-controlled devices. A voltage of +12V to +18V (typical value) should be applied between the gate and emitter to turn it on; for turn-off, 0V or negative voltage (such as -5V to -15V) can be applied to enhance anti-interference ability and speed up turn-off.

 

The gate drive voltage must not exceed ±20V, otherwise the gate oxide layer could be damaged.

 

Current and Voltage Rating Selection
IGBTs can handle currents of several hundred amperes (for example, over 500A) and voltages of several thousand volts. When selecting, a margin of 20%~30% should be left to avoid overvoltage or overcurrent damage.