Definition of Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled, voltage-driven power semiconductor device that combines the advantages of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and BJT (Bipolar Junction Transistor).

 

Core Definition Points
Structure Composition: Composed of the high input impedance and voltage-driven characteristics of a MOSFET combined with the low conduction voltage drop and high current carrying capability of a BJT.

Working Principle: By applying voltage to the gate to control channel formation, it provides base current to the PNP transistor, achieving turn-on or turn-off.

Terminal Structure: It has three terminals-Gate (G), Collector (C), and Emitter (E).

 

Main Advantages:
High input impedance (like MOSFET, low driving power)
Low conduction voltage drop (like BJT, low conduction loss)
Suitable for high voltage, high current, and medium-high frequency applications