Basic Characteristics Of Insulated Gate Bipolar Transistor (IGBT)

Main Electrical Characteristics

High Input Impedance: Inherits the characteristics of MOSFET, requires low driving power, and has a simple driving circuit.

 

Low Conduction Voltage Drop: Utilizes the conductivity modulation effect; the on-state saturation voltage (Vce(sat)) is much lower than that of MOSFETs with the same voltage rating, typically 1.5~3V.

 

High Voltage and Large Current Capability: Suitable for voltage levels from 600V to 6500V, with current reaching over 10A to 1800A.

 

Moderate Switching Frequency: Operating frequency range is usually tens of kHz (such as 10–100kHz), higher than BJT but lower than MOSFET.

 

Positive Temperature Coefficient: Under rated current, Vce(sat) slightly increases with temperature, which is beneficial for current sharing when used in parallel.