Definition Of Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled, voltage-driven power semiconductor device that combines the advantages of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and BJT (Bipolar Junction Transistor).

 

Core Definition Points
Structure Composition: Combines the high input impedance and voltage-driven characteristics of a MOSFET with the low conduction voltage drop and high current-carrying capability of a BJT.

 

Working Principle: By applying voltage to the gate to control channel formation, it provides base current to the PNP transistor, achieving turn-on or turn-off.

 

Terminal Structure: Has three electrodes - Gate (G), Collector (C), and Emitter (E).

 

Main Advantages
High input impedance (similar to MOSFET, low driving power)

Low conduction voltage drop (similar to BJT, low conduction loss)

Suitable for high voltage, high current, and medium to high-frequency applications