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![High Power Density IGBT Modules]()
High Power Density IGBT ModulesOur 3-Phase Full-Bridge PIM Module puts all power parts in one package. We are Hangzhou Zhongda Motor. We started developing and selling power electronics in 1987. Our 3-Phase Full-Bridge PIM
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![1200 Volt Power Transistor]()
1200 Volt Power TransistorThe 1200 Volt Power Transistor covers current ratings from 20A to 300A and integrates an insulation buffer layer to reduce high-voltage electromagnetic interference. It is suitable for 380V/480V
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![Industrial Power Switching Module]()
Industrial Power Switching ModuleThe Industrial Power Switching Module covers mainstream industrial voltage levels of 600 V and 1200 V, with rated currents ranging from 30 A to 500 A in various grades. It features multiple surge and
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![Space Saving IGBT Module]()
Space Saving IGBT ModuleThe Space Saving IGBT Module uses a 600V industrial voltage platform with current ratings from 15A to 130A. The ultra-thin thermal substrate design solves heat dissipation challenges in compact
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![High Efficiency IGBT Module]()
High Efficiency IGBT ModuleThe High Efficiency IGBT Module adopts a compact 600V voltage platform with current ratings from 20A to 120A. Its anti-temperature and vibration-resistant packaging structure makes it suitable for
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![Universal IGBT Semiconductor Module]()
Universal IGBT Semiconductor ModuleThe Universal IGBT Semiconductor Module covers 600V and 1200V voltage platforms with current ratings from 30A to 150A. The integrated buffer circuit simplifies external circuit design, providing an
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![High Current IGBT Component]()
High Current IGBT ComponentThe High Current IGBT Component is available in 600V and 1200V voltage platforms with current ratings from 100A to 600A. The built-in short-circuit protection circuit reduces system failure risks.
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![Silicon Carbide Power Module]()
Silicon Carbide Power ModuleThe Silicon Carbide Power Module supports high-frequency carrier operation. Its high-temperature-resistant SiC chip structure simplifies system cooling design. Available voltage ratings include 600V
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![Insulated Gate Bipolar Transistor Device]()
Insulated Gate Bipolar Transistor DeviceThe Insulated Gate Bipolar Transistor Device series covers multiple voltage and current specifications. With low switching loss chip design and strong surge current resistance, these devices are
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![Sic IGBT Module]()
Sic IGBT ModuleOur General-Purpose IGBT Modules are exactly that. Hangzhou Zhongda Motor Co., Ltd. started in 1987. We make these General-Purpose IGBT Modules for the most common sizes. 50A, 75A, 100A, 150A at 650V
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![General-Purpose IGBT Modules]()
General-Purpose IGBT ModulesOur Compact IGBT Modules use a small package. They are perfect for compact devices. Hangzhou Zhongda Motor Co., Ltd. started in 1987. We have our own R&D and sales team. We made this Compact IGBT
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![Compact IGBT Modules]()
Compact IGBT ModulesOur Packaged IGBT Modules use industry-standard shapes and pins. They can replace most popular brands. We are Hangzhou Zhongda Motor. We started developing and selling power semiconductors in 1987.
Naomi Coward
William Lucas
John Walker
Reginald Dimauro
John Brandt
Sharon Howarth